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E-mail
billion.xiao@glb-et.com
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Phone
18573116298
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Address
Room 905, northwest corner of the intersection of Furong Road and Chengnan Road, Chengnan Road Street, Tianxin District, Changsha City, Hunan Province
Product Categories
Hunan Greber Electronic Technology Co., Ltd
Quotation for ESD static electricity and latch testing system
NegotiableUpdate on 01/21
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Overview
The ES660 electrostatic discharge and latch testing system is a multi pin automatic testing equipment designed to meet the strict requirements of modern semiconductor testing. This multifunctional device is designed to seamlessly support human body modeling (HBM), machine modeling (MM), and latch testing, providing a comprehensive solution for evaluating the reliability and robustness of integrated circuits (ICs) and electronic components. The ES660-P1 configuration supports up to 1280 pins, making it ideal for testing complex ICs and electronic components with a large number of connections. Thereby shortening testing time and improving productivity.
Product Details
ES660 Electrostatic Discharge and Latch Testing System
1. description
The ES660 series electrostatic discharge and latch (LU) testing system is a multi pin automatic testing equipment designed to meet the strict requirements of modern semiconductor testing. This multifunctional device is designed to seamlessly support human body modeling (HBM), machine modeling (MM), and latch testing, providing a comprehensive solution for evaluating the reliability and robustness of integrated circuits (ICs) and electronic components. ES660 is an upgraded version of ES612A series with higher configuration options.
The ES660-P1 configuration supports up to 1280 pins, making it ideal for testing complex ICs and electronic components with a large number of connections. Its high pin count capacity ensures accurate and efficient evaluation of large devices, thereby reducing testing time and improving productivity.
If a higher pin count is required, the ES660-P1 configuration can be upgraded to ES660-P2 (up to 2560 pins).
2. feature
Compatible with multiple testing methods and standards
Highly flexible bias and pin configuration capability
Automated testing efficiency
Having excellent control and monitoring
Leakage and DC scanning
data analysis
Multiple discharge heads, software automatically switches
3. application
ESD testing of semiconductor devices
The HBM module complies with ANSI/ESDA/JEDEC JS-001, MIL-STD-883E, AEC Q100-002
MM module complies with ANSI/ESDA SP5.2
The latch test complies with JEDEC JESD78
Transient latch complies with ANSI/ESD SP5.4.1
4. Specifications
ES660 Basic Unit
| parameter | ES660 | unit | remark |
| touch screen | 5 | inch | |
| size | 480 X 497.5 X 265 | mm | |
| weight | 28 | kg | Complete installation |
| ESD 和 LU 波形 | Optional passive voltage and current probes | ||
| Supported oscilloscopes | The mainstream models of Keysight, Tektronix, LeCroy, and Rigol | customizable | |
| Supported SMUs | The mainstream models of Keysight, Tektronix, LeCroy, and Rigol | customizable | |
| Supported power sources | The mainstream models of Keysight, Tektronix, LeCroy, and Rigol | customizable |
HBM Human Body Model Options
（ANSI/ESDA/JEDEC JS-001）
| parameter | ES660-P1-HBM8 | ES660-P1-HBM10 | unit | remark |
| output voltage | ±10～8000 | ±10～10000 | V | |
| Discharge RC value | C: 100 pF ± 10%, R: 1.5k Ω ± 1% | |||
| short circuitPeak load currentIps | 0.67 ± 10% per kV | A | ||
| short circuitLoad rise timetrs | 2 < trs< 10 | ns | ||
| short circuitLoad decay timetds | 130 < tds< 170 | ns | ||
| short circuitRinging trs | < Ips15% of | |||
| 500Ωpeak loadcurrentIpr | Ipr/Ips≥ 63% | |||
| 500ΩLoad rise timetrr | 5 < trr< 25 | ns | ||
| fastestpulse speed | 10 | Per second | ||
| Number of simultaneous pulses | >=8 | 512 pins and above | ||
MM model options
（ANSI/ESD SP5.2）
| parameter | ES660-P1-MM2 | ES660-P1-MM4 | unit | remark |
| output voltage | ±10 ~ 2000 | ±10 ~ 4000 | V | |
| Discharge RC value | C: 200 pF, R: 0 Ω | |||
| short circuitloadpeak currentIp1 | 1.75 ± 10% per 100V | |||
| short circuitloadIp2 | Ip167%~90% | |||
| short circuitLoad pulse cycletpm | 66 < tpm< 90 | |||
| 500Ω load peak valuecurrentIpr | 0.85 – 1.2 | @The 400V condition meets the standard | ||
| 500ΩloadI100 | 0.23 – 0.4 | @The 400V condition meets the standard | ||
| Fastest pulse speed | 10 | Per second | ||
| Number of simultaneous pulses | >=8 | 512 pins and above | ||
DC&Latch Options
（JEDEC JESD78F.01）
| parameter | ES660-P1-LU | remark |
| Preprocess vector | Capable of ≥ 20 MHz, 256K depth | external settings |
| V/I 4Line Kelvin measurement | yes | |
| DUT V/I bus power supply | 3+1, 5+1, 7+1 | Support external extension of DC source |
| LU waveform capture | yes | |
| matrixDCvoltage | 200V | |
| SSR matrixDCvoltage(V) | 100V | |
| pinDCcurrent | 2A | |
| DC channel current | 15A | |
| Default latch source voltage | >= 150V | Current limit 1.2 A |
| defaultLock source current | >= 10A | Voltage 6 V |
TLU transient latch option
（ANSI/ESD SP5.4.1）
planHardware support for latch transient pulse source:
ES622 (TLP/ VF–TLP), EOS-500 (EOS),LVS-500 (LVS),MM
5. Order Information
| serial number | model | description |
| Basic Unit Options | ||
| 1.1 | ES660-P1-BU | Basic Unit of HBM/MM/LU ATE System Based on Relays |
| 1.2 | ES660-P1-HBM8 | HBM model testing option, voltage up to 8 kV |
| 1.3 | ES660-P1-HBM10 | HBM model testing option, voltage up to 10 kV (discontinued) |
| 1.4 | ES660-P1-MM2 | MM model testing option, voltage up to 2 kV |
| 1.5 | ES660-P1-MM4 | MM model testing option, voltage up to 4 kV (discontinued) |
| 1.6 | ES660-P1-LU | Latch Test Options (Software) |
| 1.7 | ES660-P1-TLU | Transient Latch Test Options (Software - TLP, EOS) |
| 1.8 | ES660-TFM | Temperature control module |
| relaycardAnd DC bias selection | ||
| 2.1 | ES660-P1-R64B4 | Extended relay card, 64 pins, 3+1 bias |
| 2.2 | ES660-P1-R64B6 | Extended relay card, 64 pins, 5+1 bias |
| 2.3 | ES660-P1-R64B8 | Extended relay card, 64 pins, 7+1 bias |
| DCelectric leakageandlatchPulse source options | ||
| 3.1 | ES660-PSMU2 | Leakage \ \ DC \ \ LU source: Dual channel pulse SMU (210V/1.5A) |
| 3.2 | ES660-SMU1 | Leakage/DC source: Single channel SMU (200V/1A) |
| 3.3 | ES660-PSU1 | DC power supply: Flexible channel PSU (32V/3A X 2 Ch+6V/5A X 1 Ch or 70V/3A X 1 Ch, or 32V/6A X 1 Ch+6V/5A X 1 Ch) |
| 3.4 | ES660-PSU2 | DC power supply: 3-channel PSU (60V/3A X 2 Ch+5V/3A X 1 Ch, or 125V/3A X 1 Ch) |
| 3.5 | ES660-PSU3 | DC power supply: high current PSU (20V/20A X 1 Ch) |
| 3.6 | ES660-PSU4 | DC power supply: high current PSU (30V/25A X 1 Ch) |
| 3.7 | ES660-PSU5 | DC power supply: 3-channel PSU (30V/6A X 2 Ch, 5V/3A X 1 Ch, or 60V/6A X 1 Ch) |
| 3.8 | ES660-PSU7 | DC power supply: Dual range PSU (100V/1A, or 30V/5A) |
| 3.9 | ES660-PSU-MC1 | Multi channel PSU: main framework with oscilloscope |
| 3.10 | ES660-PSUC1 | Multi channel PSU: 50V, 5A, 50W module |
| 3.11 | ES660-PSUC2 | Multi channel PSU: 50V, 10A, 100W module |
| 3.12 | ES660-PSUC3 | Multi channel PSU: 60V, 5A, 300W module |
| 3.13 | ES660-PSUC4 | Multi channel PSU: 100V, 1A, 100W module |
| 3.14 | ES660-PSUC5 | Multi channel PSU: 100V, 3A, 300W module |
| 3.15 | ES660-PSUC6 | Multi channel PSU: 150V, 2A, 300W module |
| Test socket options | ||
| 4.1 | ES660-P1-DS512 | DUT socket PCB 512 pin |
| 4.2 | ES660-P1-DS1024 | DUT socket PCB 1024 pin |
| 4.3 | ES660-P1-DSC1 | Customized pin count for DUT socket PCB |
| Oscilloscope Options | ||
| 5.1 | MISC-OSC350 | Digital oscilloscope (350 MHz, 4-channel) |
| 5.2 | MISC-OSC1 | Digital Oscilloscope (1 GHz, 5 GS/s, 4 Ch) |
| 5.3 | CT-T03-1p0 | Broadband current probe, 1V/A, 2kHz-2GHz |
Note: Motherboard, matrix card, waveform board, and self calibration diagnostic board are standard configurations of the equipment and therefore not reflected in the ordering information.
ES660 Electrostatic Discharge and Latch Testing System
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