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E-mail
75046748@qq.com
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Phone
17317784455
- Address
Feinuofei Technology (Shanghai) Co., Ltd
75046748@qq.com
17317784455
Our company produces partially depleted gold silicon surface barrier semiconductor detectors,A The series features high energy resolution and thin windows, making it suitable for applications with high energy spectrum requirements, such as radon and thorium analyzers,B Series in A The series of windows are coated with a protective layer in front of them, overcoming the disadvantages of easy damage and inability to wipe the windows. They are suitable for detectors with low energy resolution requirements and are used for measuring radioactive intensity.
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model |
Working Voltage |
Depletion zone thickness μm |
compareOrtec U-016-300-100 type detector (Am-241 Surface SourceMeasurement of energy resolution under vacuum1.2 |
compareOrtec U-016-300-100 type detector (Am-241 Surface SourceMeasurement of peak channel location under vacuum202 |
A-AS20 |
5~300VDC |
greater than 1000 |
0.7~1.4 |
204~206 |
A-AS26 |
5~300VDC |
greater than 1000 |
0.7~1.4 |
204~206 |
B-AS20 |
5~300VDC |
greater than 1000 |
4.0~4.9 |
189-191 |
B-AS26 |
5~300VDC |
greater than 1000 |
4.2~4.9 |
189-191 |